RF PROPERTIES OF EPITAXIAL LIFT-OFF HEMT DEVICES

被引：7

作者：

YOUNG, PG ^{[1
]}

ALTEROVITZ, SA ^{[1
]}

MENA, RA ^{[1
]}

SMITH, ED ^{[1
]}

机构：

[1] NASA,LEWIS RES CTR,SOLID STATE TECHNOL BRANCH,CLEVELAND,OH 44135

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(max). F(T) consistently shows an increase of 12-20 % for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

引用

页码：1905 / 1909

页数：5

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