REAL SPACE TRANSFER NOISE IN BURIED-CHANNEL DEVICES

被引：2

作者：

TANG, JY ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期

关键词：

D O I：

10.1109/T-ED.1981.20329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 289

页数：5

共 10 条

[1]

Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351

[2] HOT-ELECTRONS IN SHORT-GATE CHARGE-COUPLED-DEVICES [J].

HESS, K ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) :1399-1405

[3] THE CHARGE-HANDLING CAPACITY OF BURIED-CHANNEL STRUCTURES UNDER HOT-ELECTRON CONDITIONS [J].

HESS, K ;

SHICHIJO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :503-504

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HESS, K ;

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[5] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].

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LIN, WN ;

CHAN, YT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (02) :158-162

[7] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J].

NING, TH .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :273-282

[8] THEORY OF NOISE IN CHARGE-TRANSFER DEVICES [J].

THORNBER, KK .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (07) :1211-1262

[9] TREATMENT OF MICROSCOPIC FLUCTUATIONS IN NOISE THEORY [J].

THORNBER, KK .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (06) :1041-1078

[10] QUANTITATIVE EFFECTS OF INTERFACE STATES ON PERFORMANCE OF CHARGE-COUPLED DEVICES [J].

TOMPSETT, MF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) :45-55

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