EFFECTS OF ANNEALING ON HG0.79CD0.21 TE EPILAYERS

被引：27

作者：

CHU, M ^{[1
]}

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5876 / 5879

页数：4

共 13 条

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[8] LPE GROWTH OF HG0.60CD0.40TE FROM TE-RICH SOLUTION [J].

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[9] EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE [J].

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STELZER, EL .

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[10] ANOMALOUS ELECTRICAL PROPERTIES OF P-TYPE HG1-XCDXTE [J].

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