CHARGE TRANSPORT IN SEMICONDUCTOR MATERIALS

被引：0
|
作者：
Stancu, Andreea [2 ]
Let, Dorin [1 ]
Bacinschi, Zorica [2 ]
机构：
[1] Valahia Univ Targoviste, Multidisciplinary S& T Res Inst, Dambovita 130082, Romania
[2] Valahia Univ Targoviste, Mat Sci PhD Sch, POS DRU Program, Dambovita 130082, Romania
来源：
JOURNAL OF SCIENCE AND ARTS | 2009年 / 02期
关键词：
semiconductors; charge transport; scattering;
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The present paper highlights few of the problems encountered in the study of charge transport in semiconductor materials under an electric field. These problems are used in mathematical simulations for better describing the electrons behavior, the necessary electrical field at witch an phonon can be emitted, the max and min conductivity of semiconductors, relaxation time as well as transmit times and tunneling probabilities. Using numerical methods and the Monte Carlo method for computer simulations this paper targets only the issues most frequently encountered in semiconductor materials.
引用
收藏
页码：316 / 326
页数：11
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