SILICON EPITAXIAL-GROWTH ON SILICON-ON-INSULATOR STRUCTURES BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

We have used rapid thermal processing chemical vapor deposition (RTPCVD) for silicon epitaxial growth on silicon-on-insulator (SOI) substrates. The surface morphology of SOI rapid thermal annealed in different ambients was also examined. A short, high-temperature H2 anneal formed an undulating SOI surface, which planarized after RTPCVD. However, severe surface pitting was observed after a high-temperature N2 anneal. No significant changes in the defect density of the silicon layers occurred after RTPCVD and no stacking faults were observed in the epilayers.