THERMODYNAMIC FACTOR INFLUENCING THE GROWTH-RATE AND PURITY OF EPITAXIAL LAYERS IN THE GA-ASCL3-H2 SYSTEM

被引：11

作者：

MORIZANE, K

MORI, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90429-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：164 / 170

页数：7

共 15 条

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MOORE, GE .

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[4] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].

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[7] VARIATION OF CARRIER CONCENTRATION OF EPITAXIAL GAAS WITHOUT ADDITION OF DOPANTS [J].

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[9] ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1381-1383

[10] THERMODYNAMIC STUDY OF GROWTH RATE OF EPITAXIAL GAAS BY GAAS/ASCL3/H2 SYSTEM [J].

SEKI, H ;

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MATUMOTO, S ;

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