CONTRIBUTION OF OPTICAL PHONONS IN LATTICE THERMAL-CONDUCTIVITY OF NACL

被引：5

作者：

TIWARI, MD

机构：

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1978年 / 48卷 / 01期

关键词：

D O I：

10.1007/BF02748652

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：102 / 108

页数：7

共 15 条

[1] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J].

CALLAWAY, J .

PHYSICAL REVIEW, 1959, 113 (04) :1046-1051

[2] THEORY OF THERMAL CONDUCTIVITY OF SOLIDS AT LOW TEMPERATURES [J].

CARRUTHERS, P .

REVIEWS OF MODERN PHYSICS, 1961, 33 (01) :92-138

[3]

CLADWELL RF, 1967, PHYS REV, V158, P851

[4]

FLUGGE S, 1955, HANDBUCH PHYSIK ED, V7, P104

[5]

GATE PB, 1965, PHYS REV, V139, pA1666

[6] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[7] TEMPERATURE DEPENDENCE OF 3-PHONON PROCESSES IN SOLIDS WITH APPLICATION TO SI GE GAAS AND INSB [J].

GUTHRIE, GL .

PHYSICAL REVIEW, 1966, 152 (02) :801-&

[8] ANALYSIS OF LATTICE THERMAL CONDUCTIVITY [J].

HOLLAND, MG .

PHYSICAL REVIEW, 1963, 132 (06) :2461-&

[9] ROLE OF 4-PHONON PROCESSES IN LATTICE THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1300 DEGREES K [J].

JOSHI, YP ;

TIWARI, MD ;

VERMA, GS .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :642-&

[10] DEPENDENCE OF PHONON CONDUCTIVITY CORRECTION TERM ON RELATIVE STRENGTH OF NORMAL AND UMKLAPP PROCESSES IN UNDOPED AND DOPED GE IN RANGE FROM 2 TO 80 K [J].

JOSHI, YP ;

TIWARI, MD ;

VERMA, GS .

PHYSICA, 1970, 47 (02) :213-&

← 1 2 →