INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS

被引：170

作者：

LAU, SS ^{[1
]}

MAYER, JW ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.325359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4005 / 4010

页数：6

共 21 条

[1] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[2] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[3] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES [J].

COE, DJ ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) :965-972

[4]

Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]

[5]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[6]

Karapet'yants M K H, 1970, THERMODYNAMIC CONSTA

[7]

KUBASCHEWSKI O, 1956, THERMOCHEMICAL DATA

[8] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J].

LAU, SS ;

CHU, WK ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1974, 23 (02) :205-213

[9] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J].

LAU, SS ;

FENG, JSY ;

OLOWOLAFE, JO ;

NICOLET, MA .

THIN SOLID FILMS, 1975, 25 (02) :415-422

[10]

MAYER JW, 1974, JPN J APPL PHYS, V2, P669

← 1 2 3 →