2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON

被引：12
作者：
BATTAGLIN, G
DELLAMEA, G
DRIGO, AV
FOTI, G
BENTINI, GG
SERVIDORI, M
机构：
[1] UNIV CATANIA,IST FIS,I-95125 CATANIA,ITALY
[2] CNR,GNSM UNIT,I-40126 BOLOGNA,ITALY
[3] CNR,ALMEL LAB,I-40126 BOLOGNA,ITALY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 49卷 / 01期
关键词：
D O I：
10.1002/pssa.2210490144
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：347 / 352
页数：6
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