SPECTRAL RESPONSE OF PHOTOCONDUCTIVITY IN POLYCRYSTALLINE SEMICONDUCTORS

被引:5
作者
CARD, HC
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D O I
10.1016/0038-1101(82)90165-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:505 / 510
页数:6
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共 58 条
[1]   QUASI-EQUILIBRIUM THERMALLY STIMULATED CURRENT PROCESS [J].
ANDERSON, JC ;
NORIAN, KH .
SOLID-STATE ELECTRONICS, 1977, 20 (04) :335-342
[2]   HIGH-EFFICIENCY CR-MIS SOLAR-CELLS ON SINGLE AND POLYCRYSTALLINE SILICON [J].
ANDERSON, WA ;
DELAHOY, AE ;
KIM, JK ;
HYLAND, SH ;
DEY, SK .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :588-590
[3]   TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].
BACCARANI, G ;
RICCO, B ;
SPADINI, G .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570
[4]   ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].
CARD, HC ;
YANG, ES .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402
[5]   MINORITY-CARRIER INJECTION (DARK) METAL-POLYCRYSTALLINE SILICON CONTACTS [J].
CARD, HC ;
HWANG, W .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (04) :161-168
[6]   ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS [J].
CARD, HC ;
HWANG, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :700-705
[7]  
CARD HC, 1981, J APPL PHYS MAY
[8]  
CARD HC, 1982, SOLAR ENERGY MATERIA, V6
[9]   FABRICATION AND CHARACTERIZATION OF INDIUM TIN OXIDE (ITO) POLYCRYSTALLINE SILICON SOLAR-CELLS [J].
CHEEK, G ;
INOUE, N ;
GOODNICK, S ;
GENIS, A ;
WILMSEN, C ;
DUBOW, JB .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :643-645
[10]   POLYCRYSTALLINE SILICON P-N-JUNCTIONS [J].
CHU, TL ;
CHU, SS ;
VANDERLEEDEN, GA ;
LIN, CJ ;
BOYD, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (05) :781-786