NANOMETER-SCALE OXIDATION OF SI(100) SURFACES BY TAPPING MODE ATOMIC-FORCE MICROSCOPY

被引：85
|
作者：
PEREZMURANO, F [1 ]
ABADAL, G [1 ]
BARNIOL, N [1 ]
AYMERICH, X [1 ]
SERVAT, J [1 ]
GOROSTIZA, P [1 ]
SANZ, F [1 ]
机构：
[1] UNIV BARCELONA,DEPT QUIM FIS,E-08028 BARCELONA,SPAIN
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 11期
关键词：
D O I：
10.1063/1.360505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The nanometer-scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip-to-sample distance. (C) 1995 American Institute of Physics.
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收藏
页码：6797 / 6801
页数：5
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