THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON

被引：96
作者：
LIN, AM
DUTTON, RW
ANTONIADIS, DA
TILLER, WA
机构：
[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[3] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期
关键词：
D O I：
10.1149/1.2127563
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1121 / 1130
页数：10
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