THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON

被引：96

作者：

LIN, AM

DUTTON, RW

ANTONIADIS, DA

TILLER, WA

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[3] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127563

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1121 / 1130

页数：10

相关论文

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