TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP

被引：7
|
作者：
BENZAQUEN, R
LEONELLI, R
ROTH, AP
机构：
[1] UNIV MONTREAL,RECH PHYS & TECHNOL & COUCHES MINCES GRP,MONTREAL,PQ H3C 3J7,CANADA
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.52.1485
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Temperature-dependent photoluminescence measurements have been performed to study the linewidth of the ground and first excited states of the neutral shallow-donor bound-exciton transition in a high-purity n-type InP epilayer. For temperatures below 20 K, a theoretical model developed by Chou and Neumark to take into account the electron-hole correlation and the usual electron-phonon coupling is found to be in acceptable agreement with the linewidth data which follows a linear dependence upon temperature.
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页码：1485 / 1488
页数：4
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