SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS(001) SURFACE PREPARED BY DEOXYGENATED AND DEIONIZED WATER-TREATMENT

被引：10
作者：
HIROTA, Y
FUKUDA, T
机构：
[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期
关键词：
D O I：
10.1063/1.113446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This letter presents the scanning tunneling microscopy (STM) images of GaAs(001) surfaces prepared by deoxygenated and de-ionized water (DODIW) treatment. The STM images reveal that the missing-dimer rows and unit cells of the 2×4 structure and atomic-layer steps of Ga-As clearly appear after heating the samples above 500°C in an ultrahigh vacuum. These experimental results suggest the DODIW treatment can attain atomically flat GaAs(001) surface.© 1995 American Institute of Physics.
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页码：2837 / 2839
页数：3
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