SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS(001) SURFACE PREPARED BY DEOXYGENATED AND DEIONIZED WATER-TREATMENT

被引：10

作者：

HIROTA, Y

FUKUDA, T

机构：

[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期

关键词：

D O I：

10.1063/1.113446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter presents the scanning tunneling microscopy (STM) images of GaAs(001) surfaces prepared by deoxygenated and de-ionized water (DODIW) treatment. The STM images reveal that the missing-dimer rows and unit cells of the 2×4 structure and atomic-layer steps of Ga-As clearly appear after heating the samples above 500°C in an ultrahigh vacuum. These experimental results suggest the DODIW treatment can attain atomically flat GaAs(001) surface.© 1995 American Institute of Physics.

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页码：2837 / 2839

页数：3

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