ELECTRON-IRRADIATION EFFECTS IN MOS SYSTEMS

被引：10
作者：
CHURCHILL, JN
COLLINS, TW
HOLMSTROM, FE
机构：
[1] UNIV CALIF,DEPT ELECT ENGN,DAVIS,CA 95616
[2] SAN JOSE UNIV,DEPT PHYS,SAN JOSE,CA 95192
[3] IBM CORP,GEN PROD DIV,SAN JOSE,CA 95193
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 12期
关键词：
D O I：
10.1109/T-ED.1974.18053
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：768 / 777
页数：10
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