NONSTEADY-STATE PHOTO-EMF IN THIN PHOTOCONDUCTIVE LAYERS

被引：6

作者：

KORNEEV, NA ^{[1
]}

STEPANOV, SI ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 11期

关键词：

D O I：

10.1109/3.333732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nonsteady-state photo-EMF produced by vibrating interference fringes in thin photoconductive layers is considered. It is shown that the frequency transfer function of the average (over the layer thickness) current density is approximately of the high-pass filter type, with the maximum amplitude at high vibration frequency (omega much-greater-than omega0) independent of the sample thickness d. The characteristic cutoff frequency omega0 however, proves to be the dependent both on d and the spatial frequency of the pattern K: in the approximation of a thin layer (epsilonKd/2 much-less-than 1), it is (epsilonKd/2)-1 times lower than that for the bulk sample (epsilonKd/2 much-greater-than 1).

引用

页码：2721 / 2725

页数：5

共 12 条

[1] MEASUREMENT OF SMALL LATERAL VIBRATIONS OF SPECKLE PATTERNS USING A NON-STEADY-STATE PHOTO-EMF IN GAAS CR [J].