INTERACTION OF TANTALUM WITH DIATOMIC AND ATOMIC OXYGEN AT LOW-PRESSURES

被引：13

作者：

GUSAKOV, AG

RASPOPOV, SA

VECHER, AA

VOROPAYEV, AG

机构：

[1] Byelorussian State University, Chemical Department, Minsk

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1993年 / 201卷

关键词：

D O I：

10.1016/0925-8388(93)90863-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Oxidation of tantalum in atomic ((O(P)))-P-3 and diatomic oxygen has been investigated in the temperature range 773-1573 K at an oxygen pressure in the range 9 x 10(-3)-7 x 10(-2) Pa. When the dissolution of oxygen in tantalum takes place, the absorption probability of atoms is considerably higher than that of molecules (14-fold higher at 1073 K). The Ta2O5 film growth rate is apparently determined by the reaction of chemisorbed oxygen atoms with tantalum according to a Langmuir-Hinshelwood mechanism and, in the case of diatomic oxygen, is proportional to the square root of the oxygen pressure.

引用

页码：67 / 72

页数：6

共 10 条

[1]

ALEKSANDROV NL, 1990, PISMA ZH TEKH FIZ+, V16, P4

[2]

[Anonymous], J LESS COMMON MET

[3] NONSTOICHIOMETRY AND MIXED CONDUCTION IN ALPHA-TA2O5 [J].