FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM

被引：222
作者：
BUTURLA, EM
COTTRELL, PE
GROSSMAN, BM
SALSBURG, KA
机构：
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1981年 / 25卷 / 04期
关键词：
D O I：
10.1147/rd.254.0218
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：218 / 231
页数：14
相关论文
共 47 条
[1]   2-DIMENSIONAL SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENT METHOD [J].
ADACHI, T ;
YOSHII, A ;
SUDO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1026-1031
[2]  
ARCHER JS, 1964, 1ST AM I AER ASTR AN
[3]   FINITE-ELEMENT METHODS IN SEMICONDUCTOR-DEVICE SIMULATION [J].
BARNES, JJ ;
LOMAX, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1082-1089
[4]  
BARNES JJ, 1977, DEC IEEE INT EL DEV, P272
[5]   NUMERICAL-SOLUTION OF POISSONS EQUATION FOR 2-DIMENSIONAL SEMICONDUCTOR-DEVICES [J].
BROWN, GW ;
LINDSAY, BW .
SOLID-STATE ELECTRONICS, 1976, 19 (12) :991-992
[6]  
BROWNE BT, 1979, NUMERICAL ANAL SEMIC
[7]   SIMULATION OF SEMICONDUCTOR TRANSPORT USING COUPLED AND DECOUPLED SOLUTION TECHNIQUES [J].
BUTURLA, EM ;
COTTRELL, PE .
SOLID-STATE ELECTRONICS, 1980, 23 (04) :331-334
[8]  
BUTURLA EM, 1976, INT C NUMERICAL METH
[9]  
BUTURLA EM, 1980, FEB IEEE INT SOL STA, P76
[10]  
BUTURLA EM, 1974, INT C COMPUTATIONAL
12345