NUMERICAL SIMULATIONS OF INDUCTIVE-HEATED FLOAT-ZONE GROWTH

被引:8
作者
CHAN, YT
CHOI, SK
机构
[1] Scientific Research Associates, Inc., Glastonbury
关键词
D O I
10.1063/1.352294
中图分类号
O59 [应用物理学];
学科分类号
摘要
The present work provides an improved fluid flow and heat-transfer modeling of float-zone growth by introducing a rf heating model so that an ad hoc heating temperature profile is not necessary. Numerical simulations were carried out to study the high-temperature float-zone growth of titanium carbide single crystal. The numerical results showed that the thermocapillary convection occurring inside the molten zone tends to increase the convexity of the melt-crystal interface and decrease the maximum temperature of the molten zone, while the natural convection tends to reduce the stability of the molten zone by increasing its height. It was found that the increase of induced heating due to the increase of applied rf voltage is reduced by the decrease of zone diameter. Surface tension plays an important role in controlling the amount of induced heating. Finally, a comparison of the computed shape of the free surface with a digital image obtained during a growth run showed adequate agreement.
引用
收藏
页码:3741 / 3749
页数:9
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