PRECISE CONTROL OF GROWTH SITE OF SILICON VAPOR LIQUID-SOLID CRYSTALS

被引：8

作者：

OKAJIMA, Y

ASAI, S

TERUI, Y

TERASAKI, R

MURATA, H

机构：

[1] DENKI KAGAKU KOGYO KK,RES CTR,3-5-1 ASAHI CHO,MACHIDA,TOKYO 19401,JAPAN

[2] DENKI KAGAKU KOGYO KK,SHIBUKAWA FACTORY,SHIBUKAWA,GUNMA 377,JAPAN

[3] UNIV UTAH,DEPT MATH & STAT,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 141卷 / 3-4期

关键词：

Crystal growth;

D O I：

10.1016/0022-0248(94)90238-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel method of vapor-liquid-solid (VLS) growth has been developed in which silicon VLS crystals are grown on mesa-shaped silicon projections covered with a gold ''hat'' on the upper surface. The mesa is fashioned on a silicon wafer by etching of the wafer surface. This ''mesa method'' allows the growth of fine silicon crystal rods at predetermined positions with micrometer accuracy, and yields rods of over 500 mum in length and under 20 mum in diameter without creating fused, kinked, or satellite rods.

引用

页码：357 / 362

页数：6

共 5 条

[1] REGULAR ARRAYS OF LAB6 WHISKERS GROWN ON SINGLE-CRYSTAL SUBSTRATES BY THE VAPOR LIQUID SOLID METHOD [J].