CRYSTAL-GROWTH OF ZNXCD1-XTE SOLID-SOLUTIONS AND THEIR OPTICAL PROPERTIES AT PHOTON ENERGIES OF LOWEST BAND-GAP REGION

被引:14
作者
EBINA, A [1 ]
SAITO, K [1 ]
TAKAHASHI, T [1 ]
机构
[1] TOHOKU UNIV, RES INST ELECT COMM, SENDAI 980, JAPAN
关键词
D O I
10.1063/1.1662816
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3659 / 3662
页数:4
相关论文
共 19 条
[1]  
BRODIN MS, 1968, SOV PHYS SEMICOND+, V2, P603
[2]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[3]   REFLECTIVITY OF ZNSEXTE1-X SINGLE-CRYSTALS [J].
EBINA, A ;
TAKAHASHI, T ;
YAMAMOTO, M .
PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (10) :3786-+
[4]   OPTICAL-ABSORPTION DUE TO ACCEPTOR LEVELS IN UNDOPED ZNTE [J].
HORIKOSHI, Y ;
TAKAHASHI, T ;
EBINA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (07) :992-+
[5]   INFRARED ABSORPTION DUE TO DONOR STATES IN ZNS CRYSTALS [J].
KUKIMOTO, H ;
SHIONOYA, S ;
KODA, T ;
HIOKI, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (06) :935-&
[6]   PHOTOELECTRONIC PROPERTIES OF GRADED COMPOSITION CRYSTALS OF II-VI SEMICONDUCTORS [J].
LAUER, RB ;
WILLIAMS, F .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2904-&
[7]   REFRACTIVE INDEX OF ZNSE, ZNTE, + CDTE [J].
MARPLE, DTF .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :539-&
[8]   EFFICIENT VISIBLE ELECTROLUMINESCENCE FROM P-N JUNCTIONS IN ZNXCD1-XTE ( 4PER CENT QUANTUM EFFICIENCY ) EXTERNAL ) IN ZN0.4CD0.6TE AT 7060DEGREES A + 77DEGREES K E ) [J].
MOREHEAD, FF ;
MANDEL, G .
APPLIED PHYSICS LETTERS, 1964, 5 (03) :53-&
[9]   SELF-COMPENSATION-LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .4. N-ZNXCD1-XTE [J].
MOREHEAD, FF ;
MANDEL, G .
PHYSICAL REVIEW, 1965, 137 (3A) :A924-&
[10]  
ROTH WL, 1967, PHYSICS CHEMISTRY 2