ELECTRONIC CHARACTERIZATION OF DOUBLE-GATE THIN-FILM TRANSISTORS

被引：5

作者：

CHEN, I

LUO, FC

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期

关键词：

D O I：

10.1016/0038-1101(81)90088-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：257 / 261

页数：5

共 9 条

[1] THIN-FILM TRANSISTORS - PAST, PRESENT AND FUTURE [J].

ANDERSON, JC .

THIN SOLID FILMS, 1978, 50 (MAY) :25-32

[2] THEORY OF FIELD EFFECT IN AMORPHOUS COVALENT SEMICONDUCTOR FILMS [J].

BARBE, DF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :102-&

[3] INFLUENCE OF A FLATBAND-VOLTAGE VARIATION ALONG CHANNEL ON DRAIN CHARACTERISTICS OF A TFT [J].

BURGELMAN, M ;

PAUWELS, HJ .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :459-461

[4]

CARNAHAN B, 1969, APPLIED NUMERICAL ME, pCH7

[5] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[6] THEORY AND INTERPRETATION OF FIELD-EFFECT CONDUCTANCE EXPERIMENT IN AMORPHOUS SILICON [J].

NEUDECK, GW ;

MALHOTRA, AK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2662-2669

[7]

Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7

[8]

Tickle A. C., 1969, THIN FILM TRANSISTOR

[9] THEORETICAL INFLUENCE OF SURFACE STATES AND BULK TRAPS ON THIN-FILM TRANSISTOR CHARACTERISTICS [J].

VANCALSTER, A ;

PAUWELS, HJ .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :691-698

← 1 →