CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE

被引：129
作者：
RUBLOFF, GW
HO, PS
FREEOUF, JF
LEWIS, JE
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 23卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.23.4183
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4183 / 4196
页数：14
相关论文
共 69 条
[1]   COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].
ALLEN, FG ;
GOBELI, GW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&
[2]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[3]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[4]  
BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581
[5]  
BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792
[6]   CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].
BRILLSON, LJ .
PHYSICAL REVIEW B, 1978, 18 (06) :2431-2446
[7]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[8]   CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].
BRILLSON, LJ ;
BACHRACH, RZ ;
BAUER, RS ;
MCMENAMIN, J .
PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401
[9]   STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].
BUCKLEY, WD ;
MOSS, SC .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&
[10]  
Cardona M., 1969, MODULATION SPECTROSC
1234567