OPTIMIZATION OF BASE-LINK IN FULLY-IMPLANTED NPNS

被引：3

作者：

NANVER, LK

GOUDENA, EJG

VANZEIJL, HW

机构：

[1] Delft Institute of Microelectronics and Submicron Technology, DIMES IC Process Research Sector, Delft University of Technology, 2600 GB, Delft

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 16期

关键词：

BIPOLAR TRANSISTORS; ION IMPLANTATION;

D O I：

10.1049/el:19930971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that the performance of washed-emitter NPNs can be significantly enhanced by using the washed-emitter-base (WEB) scheme. The characteristics of devices with cutoff frequencies from 15-27 GHz are discussed.

引用

页码：1451 / 1452

页数：2