GROWTH AND CHARACTERIZATION OF DIRECT-CONNECTING ALGAAS/GAAS TJS']JS LIGHT-EMITTING DEVICE ON SI GAAS SUBSTRATE BY LPE

被引：1

作者：

CHANG, LB ^{[1
]}

LAN, H ^{[1
]}

机构：

[1] CHUNG SHAN INST SCI & TECHNOL,TAOYUAN,TAIWAN

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1992年 / 27卷 / 03期

关键词：

D O I：

10.1002/crat.2170270306

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High output power (above 3 mW/facet) AlGaAs/GaAs Transverse-Junction Stripe light emitting diodes have been grown on Semi-Insulating (100) GaAs substrates by Liquid Phase Epitaxy. These light emitting diodes utilize a "Direct-connecting" transverse-junction stripe structure, which can confine the transverse-current and reduce the series resistance. By thinning the thickness of the "effective active-layer" of this structure, a room-temperature pulsed lasing operation is also achieved with a threshold current as low as 35 mA and a peak wavelength around 904 nm. This "Direct-connecting" transverse-junction stripe structure may be a pathway to monolithically integrate a Transverse-Junction Stripe light emitting device with a Metal-Semiconductor Field Effect Transistor on an electrical isolated semi-insulating substrate in the future.

引用

页码：311 / 320

页数：10

共 6 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].