ON THE TRANSMISSION COEFFICIENT OF GRADED COMPOSITION GAAS/ALXGA1-XAS HETEROJUNCTIONS UNDER AN ELECTRIC-FIELD

被引：7
|
作者：
FREIRE, VN
FARIAS, GA
AUTO, MM
机构：
[1] Departamento de Fisica/UFC, 60450, Fortaleza, Ceará
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 08期
关键词：
D O I：
10.1063/1.350832
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of an electric field on the electrons transmission across graded composition GaAs/AlxGa1-xAs heterojunctions is presented. Analytical expressions for the transmission coefficient were obtained by solving the Schrodinger equation in all space. We assume a heterointerface region of width l, with a linear growth of aluminum molar fraction. An increase in the interfacial heterojunction width is responsible for an enhancement and a shift of the transmission coefficient towards low energies. In contrast, an increase of the applied electric field intensity shifts the nonabrupt transmission coefficient towards high energies.
引用
收藏
页码：4076 / 4078
页数：3
相关论文
共 50 条
  • [41] Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles
    Wang, Yin
    Zahid, Ferdows
    Zhu, Yu
    Liu, Lei
    Wang, Jian
    Guo, Hong
    APPLIED PHYSICS LETTERS, 2013, 102 (13)
  • [42] Transverse magnetoresistance of GaAs/AlxGa1-xAs heterojunctions in the presence of parallel magnetic fields
    Heisz, JM
    Zaremba, E
    PHYSICAL REVIEW B, 1996, 53 (20): : 13594 - 13604
  • [43] QUANTUM BALANCE-EQUATIONS FOR ELECTRONIC TRANSPORT IN ALXGA1-XAS/GAAS HETEROJUNCTIONS
    SALA, C
    MAGNUS, W
    DEMEYER, K
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7689 - 7696
  • [44] PHONON-SCATTERING-LIMITED ELECTRON MOBILITIES IN ALXGA1-XAS/GAAS HETEROJUNCTIONS
    KAWAMURA, T
    DASSARMA, S
    PHYSICAL REVIEW B, 1992, 45 (07): : 3612 - 3627
  • [45] ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GAAS/ALXGA1-XAS HETEROJUNCTIONS
    FREIRE, AK
    RIBEIRO, J
    FARIAS, GA
    FREIRE, VN
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (04) : 351 - 354
  • [46] Resonant light scattering as a probe of Si δ-layer in AlxGa1-xAs/GaAs heterojunctions
    Katayama, S
    Koyano, M
    Yamada, S
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 215 (01): : 359 - 364
  • [47] Electron scattering by optical phonons in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells
    Zianni, X
    Simserides, CD
    Triberis, GP
    PHYSICAL REVIEW B, 1997, 55 (24): : 16324 - 16330
  • [48] Photoemission from advanced heterostructured AlxGa1-xAs/GaAs photocathodes under multilevel built-in electric field
    Feng, Cheng
    Zhang, Yijun
    Qian, Yunsheng
    Chang, Benkang
    Shi, Feng
    Jiao, Gangcheng
    Zou, Jijun
    OPTICS EXPRESS, 2015, 23 (15): : 19478 - 19488
  • [49] Oscillating electron mobility in GaAs/AlxGa1-xAs double quantum well structure under applied electric field
    Sahu, Trinath
    Sahoo, Narayan
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 77 : 162 - 170
  • [50] Quantum efficiency of transmission-mode AlxGa1-xAs/GaAs photocathodes with graded-composition and exponential-doping structure
    Feng, Cheng
    Zhang, Yijun
    Qian, Yunsheng
    Xu, Yuan
    Liu, Xinxin
    Jiao, Gangcheng
    OPTICS COMMUNICATIONS, 2016, 369 : 50 - 55
12345