ON THE TRANSMISSION COEFFICIENT OF GRADED COMPOSITION GAAS/ALXGA1-XAS HETEROJUNCTIONS UNDER AN ELECTRIC-FIELD

被引：7
|
作者：
FREIRE, VN
FARIAS, GA
AUTO, MM
机构：
[1] Departamento de Fisica/UFC, 60450, Fortaleza, Ceará
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 08期
关键词：
D O I：
10.1063/1.350832
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of an electric field on the electrons transmission across graded composition GaAs/AlxGa1-xAs heterojunctions is presented. Analytical expressions for the transmission coefficient were obtained by solving the Schrodinger equation in all space. We assume a heterointerface region of width l, with a linear growth of aluminum molar fraction. An increase in the interfacial heterojunction width is responsible for an enhancement and a shift of the transmission coefficient towards low energies. In contrast, an increase of the applied electric field intensity shifts the nonabrupt transmission coefficient towards high energies.
引用
收藏
页码：4076 / 4078
页数：3
相关论文
共 50 条
  • [31] ELECTRIC-FIELD EFFECTS ON EXCITONS IN ALXGA1-XAS QUANTUM WELLS AND THEIR APPLICATIONS TO OPTOELECTRONIC DEVICES
    TARUCHA, S
    PLOOG, K
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 85 - 92
  • [32] Formation of electric-field domains in GaAs/AlxGa1-xAs quantum cascade laser structures -: art. no. 033311
    Lu, SL
    Schrottke, L
    Teitsworth, SW
    Hey, R
    Grahn, HT
    PHYSICAL REVIEW B, 2006, 73 (03)
  • [33] Energy states in graded cylindrical GaAs/AlxGa1-xAs quantum wires
    de Carvalho, RRL
    Farias, GA
    Freire, VN
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1998, 210 (01): : 75 - 80
  • [34] Energy states in graded spherical GaAs/AlxGa1-xAs quantum dots
    Freire, VN
    Shi, JM
    Farias, GA
    PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSCALE MATERIALS, DEVICES, AND SYSTEMS, 1997, 97 (11): : 197 - 210
  • [35] Exciton Stark shift in graded GaAs/AlxGa1-xAs quantum wells
    Ferreira, EC
    da Costa, JAP
    Freire, JAK
    Freire, VN
    Farias, GA
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 220 - 221
  • [36] Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice
    vonPlessen, G
    Meier, T
    Koch, M
    Feldmann, J
    Thomas, P
    Koch, SW
    Gobel, EO
    Goossen, KW
    Kuo, JM
    Kopf, RF
    PHYSICAL REVIEW B, 1996, 53 (20): : 13688 - 13693
  • [37] ORIGIN OF RESIDUAL PERSISTENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED GAAS/ALXGA1-XAS HETEROJUNCTIONS
    THEIS, TN
    WRIGHT, SL
    APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1374 - 1376
  • [38] Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions
    Hayne, M
    Usher, A
    Harris, JJ
    Moshchalkov, VV
    Foxon, CT
    PHYSICAL REVIEW B, 1998, 57 (23): : 14813 - 14817
  • [39] ELECTRON-TRANSPORT IN GAAS/ALXGA1-XAS HETEROJUNCTIONS AT LOW-TEMPERATURES
    ARTAKI, M
    HESS, K
    SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 383 - 386
  • [40] PERSISTENT PHOTOCONDUCTIVITY AND 2-BAND EFFECTS IN GAAS/ALXGA1-XAS HETEROJUNCTIONS
    FLETCHER, R
    ZAREMBA, E
    DIORIO, M
    FOXON, CT
    HARRIS, JJ
    PHYSICAL REVIEW B, 1990, 41 (15): : 10649 - 10666
12345