ON THE TRANSMISSION COEFFICIENT OF GRADED COMPOSITION GAAS/ALXGA1-XAS HETEROJUNCTIONS UNDER AN ELECTRIC-FIELD

The effect of an electric field on the electrons transmission across graded composition GaAs/AlxGa1-xAs heterojunctions is presented. Analytical expressions for the transmission coefficient were obtained by solving the Schrodinger equation in all space. We assume a heterointerface region of width l, with a linear growth of aluminum molar fraction. An increase in the interfacial heterojunction width is responsible for an enhancement and a shift of the transmission coefficient towards low energies. In contrast, an increase of the applied electric field intensity shifts the nonabrupt transmission coefficient towards high energies.