ON THE TRANSMISSION COEFFICIENT OF GRADED COMPOSITION GAAS/ALXGA1-XAS HETEROJUNCTIONS UNDER AN ELECTRIC-FIELD

被引：7
|
作者：
FREIRE, VN
FARIAS, GA
AUTO, MM
机构：
[1] Departamento de Fisica/UFC, 60450, Fortaleza, Ceará
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 08期
关键词：
D O I：
10.1063/1.350832
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of an electric field on the electrons transmission across graded composition GaAs/AlxGa1-xAs heterojunctions is presented. Analytical expressions for the transmission coefficient were obtained by solving the Schrodinger equation in all space. We assume a heterointerface region of width l, with a linear growth of aluminum molar fraction. An increase in the interfacial heterojunction width is responsible for an enhancement and a shift of the transmission coefficient towards low energies. In contrast, an increase of the applied electric field intensity shifts the nonabrupt transmission coefficient towards high energies.
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页码：4076 / 4078
页数：3
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