LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL GAAS USING A COORDINATION COMPOUND - MONOCHLORODIETHYLGALLIUM-TRIETHYLARSINE

被引：0

作者：

CONSTANT, G ^{[1
]}

LEBUGLE, A ^{[1
]}

MONTEL, G ^{[1
]}

ZAOUK, A ^{[1
]}

机构：

[1] ECOLE NATL SUPER CHIM,CRISTALLOCHIM REACTIVITE & PROTECT MAT LAB,EQUIPE RECH 263,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C351 / C351

页数：1

共 50 条

[1] NEW APPROACH TO LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS BY PHOTOSTIMULATED METALORGANIC CHEMICAL VAPOR-DEPOSITION
KACHI, T
ITO, H
TERADA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1556 - L1558
[2] LOW-TEMPERATURE GAAS METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIMETHYLAMINE GALLANE AND ARSINE
YAMAUCHI, Y
KOBAYASHI, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (2A): : L160 - L163
[3] EPITAXIAL-GROWTH OF HGTE BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
WANG, CH
LU, PY
WILLIAMS, LM
CHU, SNG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : C176 - C176
[4] LOW-TEMPERATURE LASER PHOTOCHEMICAL VAPOR-DEPOSITION OF GAAS
YORK, PK
EDEN, JG
COLEMAN, JJ
FERNANDEZ, GE
BEERNINK, KJ
APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1866 - 1868
[5] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
MEAKIN, D
STOBBS, M
STOEMENOS, J
ECONOMOU, NA
APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1053 - 1055
[6] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
MEAKIN, D
STOBBS, M
STOEMENOS, J
ECONOMOU, NA
APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1389 - 1391
[7] LOW-TEMPERATURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF PLATINUM
CHEN, YJ
KAESZ, HD
THRIDANDAM, H
HICKS, RF
APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1591 - 1592
[8] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SI AND SIGE LAYERS AT ATMOSPHERIC-PRESSURE
DEBOER, WB
MEYER, DJ
APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1286 - 1288
[9] LOW-TEMPERATURE DEPOSITION OF HEXAGONAL BN FILMS BY CHEMICAL VAPOR-DEPOSITION
MOTOJIMA, S
TAMURA, Y
SUGIYAMA, K
THIN SOLID FILMS, 1982, 88 (03) : 269 - 274
[10] EPITAXIAL-GROWTH OF BETA-SIC ON SI BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION
CHAUDHRY, MI
WRIGHT, RL
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (08) : 1595 - 1598

← 1 2 3 4 5 →