DETERMINATION OF GAMMA-X TRANSFER RATES IN TYPE-II (AL)GAAS/ALAS SUPERLATTICES

被引：3
|
作者：
FELDMANN, J
SATTMANN, R
PETER, G
GOBEL, EO
NUNNENKAMP, J
KUHL, J
HEBLING, J
PLOOG, K
CINGOLANI, R
MURALIDHARAN, R
DAWSON, P
FOXON, CT
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[2] ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY
[3] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
SURFACE SCIENCE | 1990年 / 229卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90928-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have experimentally determined the Γ-X transfer rates in a type II GaAs/AlAs short period superlattice as well as in a type II AlxGa1-xAs/AlAs superlattice. Transfer times on a subpicosecond- and picosecond-timescale are observed depending on the layer-thickness. We conclude from temperature dependent measurements that for thicker layers electron-phonon scattering is the dominant scattering mechanism whereas for thinner layers interface roughness scattering may become dominant. © 1990.
引用
收藏
页码：452 / 455
页数：4
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