PHOTO-LUMINESCENCE OF GALLIUM-ARSENIDE ENCAPSULATED WITH ALUMINUM NITRIDE AND SILICON-NITRIDE

被引：4

作者：

BIREY, H ^{[1
]}

PAK, SJ ^{[1
]}

SITES, JR ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum nitride and silicon nitride films were deposited on lightly doped n-type GaAs: Si by low-energy ion beam sputtering. Mechanically, the films were stable at annealing temperatures above 900°C. In contrast to bare GaAs and previously reported encapsulation with Si3N4, where the 1.36-eV line appears at relatively low annealing temperatures, there was no change in the photoluminescence spectrum until the samples were annealed at 800°C in the case of aluminum nitride and 900°C for silicon nitride.

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页码：623 / 625

页数：3

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