POSITRON-LIFETIME STUDIES OF HYDROGENATED AMORPHOUS-SILICON

被引：29

作者：

BHIDE, VG ^{[1
]}

DUSANE, RO ^{[1
]}

RAJARSHI, SV ^{[1
]}

SHALIGRAM, AD ^{[1
]}

DAVID, SK ^{[1
]}

机构：

[1] UNIV POONA,DEPT ELECTR SCI,POONA 411007,MAHARASHTRA,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.339167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：108 / 116

页数：9

共 47 条

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