POSITRON-LIFETIME STUDIES OF HYDROGENATED AMORPHOUS-SILICON

被引：29

作者：

BHIDE, VG ^{[1
]}

DUSANE, RO ^{[1
]}

RAJARSHI, SV ^{[1
]}

SHALIGRAM, AD ^{[1
]}

DAVID, SK ^{[1
]}

机构：

[1] UNIV POONA,DEPT ELECTR SCI,POONA 411007,MAHARASHTRA,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.339167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：108 / 116

页数：9

相关论文

共 47 条

[1] [Anonymous], 1983, POSITRON SOLID STATE
[2] COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON
BARNA, A
BARNA, PB
RADNOCZI, G
TOTH, L
THOMAS, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 81 - 84
[3] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
[4] RADIATION EFFECTS IN MATERIALS
BROOKS, H
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1118 - 1124
[5] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS
BROWN, WL
AUGUSTYNIAK, WM
WAITE, TR
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268
[6] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[7] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON SOLAR-CELLS
CARLSON, DE
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 503 - 518
[8] INFRARED-ABSORPTION IN A-SI-H - 1ST OBSERVATION OF GASEOUS MOLECULAR H-2 AND SI-H OVERTONE
CHABAL, YJ
PATEL, CKN
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (02) : 210 - 213
[9] DLTS STUDY OF THE GAP STATES OF AMORPHOUS SI1-XHX ALLOYS
COHEN, JD
LANG, DV
BEAN, JC
HARBISON, JP
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 581 - 586
[10] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM
CONNELL, GAN
PAWLIK, JR
[J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

← 1 2 3 4 5 →