A NEW METHOD FOR STUDYING THE DISTRIBUTION OF INDUCED DEFECTS IN POTENTIAL WELLS IN A-SI-H/A-SINX-H MULTILAYER

被引：0
|
作者：
WANG, ZC
GUO, SK
CAO, GR
CHEN, C
SUN, MX
机构：
[1] Department of Physics, Nanjing University, Nanjing
来源：
CHINESE PHYSICS LETTERS | 1994年 / 11卷 / 09期
关键词：
D O I：
10.1088/0256-307X/11/9/013
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The induced defects and their distribution in a-Si:H/a-SiNx:H multilayers can be determined by use of electromagnetic technique. It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the him; a large number of induced defects exist in the interface region away from substrate, but few or no in the interface region near substrate.
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页码：573 / 576
页数：4
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