ELECTRON-DISTRIBUTION IN SILICON .2. THEORETICAL INTERPRETATION

被引：105

作者：

ALDRED, PJE ^{[1
]}

HART, M ^{[1
]}

机构：

[1] UNIV BRISTOL, HH WILLS PHYS LAB, BRISTOL, GLOUCESTERSHIRE, ENGLAND

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1973年 / 332卷 / 1589期

关键词：

D O I：

10.1098/rspa.1973.0023

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：239 / 254

页数：16

共 27 条

[1] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT
ALDRED, PJE
HART, M
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[2] VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON
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[3] AB INITIO COMPUTATIONS IN ATOMS AND MOLECULES
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[4] A STUDY OF (222) FORBIDDEN REFLECTION IN GERMANIUM AND SILICON
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[J]. ACTA CRYSTALLOGRAPHICA, 1965, 18 : 17 - &
[6] COVALENT BOND IN SILICON
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[7] COVALENT BOND IN DIAMOND
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[8] A GENERAL STRUCTURE FACTOR FORMALISM FOR INTERPRETING ACCURATE X-RAY AND NEUTRON DIFFRACTION DATA
DAWSON, B
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 298 (1454): : 255 - &
[9] ABSOLUTE X-RAY SCATTERING FACTORS OF SILICON AND GERMANIUM
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WEISS, RJ
[J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1869 - &
[10] *UBER EINE APPROXIMATION DES HARTREEFOGKSCHEN POTENTIALS DURCH EINE UNIVERSELLE POTENTIALFUNKTION
GASPAR, R
[J]. ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1954, 3 (3-4): : 263 - 286

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