MEASUREMENT OF DEEP LEVELS USING C-V TECHNIQUES

被引：5
|
作者：
LAMBERT, LM
KUMP, HJ
机构：
[1] IBM CORP, SYST PROD DIV, Essex Jct, VT USA
[2] UNIV VERMONT, BURLINGTON, VT USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 01期
关键词：
D O I：
10.1002/pssa.2210210125
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：235 / 245
页数：11
相关论文
共 50 条
  • [21] MEASUREMENT OF ELECTRICAL IMPURITY PROFILE OF IMPLANTED IONS, USING PULSED MOS C-V TECHNIQUE
    VERJANS, J
    VANOVERSTRAETEN, RJ
    SOLID-STATE ELECTRONICS, 1975, 18 (11) : 911 - 916
  • [22] C-V profiling of GaAs using electrolyte barriers
    Kaniewska, M
    Slomka, I
    CRYSTAL RESEARCH AND TECHNOLOGY, 2001, 36 (8-10) : 1113 - 1118
  • [23] RECIPROCAL C-V PLOTS USING A PULSE TECHNIQUE
    CHOE, YM
    MURPHY, NSJ
    SOLID-STATE ELECTRONICS, 1975, 18 (11) : 1032 - 1033
  • [24] Combined C-V/I-V Front-End-Of-Line Measurement
    Polonsky, Stas
    Realov, Simeon
    Liao, Jiun-Hsin
    Hargrove, Michael
    Ketchen, Mark
    2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2012, : 241 - 244
  • [25] C-V MEASUREMENTS OF ISOTYPE HETEROJUNCTIONS WITH DEEP RECHARGEABLE INTERFACE STATES
    PITTROFF, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : K53 - K56
  • [26] Measurement of band offsets and interface charges by the C-V matching method
    Nemirovsky, Y
    Gordon, G
    Goren, D
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) : 1113 - 1120
  • [27] Influence of relaxation polarization absorption current on the C-V characteristic measurement
    Hu, Jianyu
    Zheng, Huan
    Meng, Xiangjun
    Sun, Yunlong
    Han, Yongsen
    Li, Zhonghua
    MEASUREMENT, 2025, 244
  • [28] Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress
    Yang, Wen
    Yuan, Jiann-Shiun
    Krishnan, Balakrishnan
    Shea, Patrick
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2019, 19 (02) : 350 - 357
  • [29] A Novel Method for the Measurement of the C-V Characteristic of a Solar Photovoltaic Cell
    Jeevandoss, C. R.
    Kumaravel, M.
    Kumar, V. Jagadeesh
    2010 IEEE INTERNATIONAL INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE I2MTC 2010, PROCEEDINGS, 2010,
  • [30] Atypical patterns in C-V flap nipple reconstruction: A customisation of the C-V flap
    Salgarello, Marzia
    Cavalcanti, Pietro
    Barone-Adesi, Liliana
    JOURNAL OF PLASTIC RECONSTRUCTIVE AND AESTHETIC SURGERY, 2014, 67 (11): : 1598 - 1599
12345