MEASUREMENT OF DEEP LEVELS USING C-V TECHNIQUES

被引：5
|
作者：
LAMBERT, LM
KUMP, HJ
机构：
[1] IBM CORP, SYST PROD DIV, Essex Jct, VT USA
[2] UNIV VERMONT, BURLINGTON, VT USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 01期
关键词：
D O I：
10.1002/pssa.2210210125
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：235 / 245
页数：11
相关论文
共 50 条
  • [1] SIMULTANEOUS MEASUREMENT OF PROFILES OF DEEP LEVELS AND SHALLOW IMPURITIES WITH THE C-V METHOD.
    Qin Guogang
    Du Yongchang
    Zhang Yufeng
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1982, 3 (02): : 89 - 94
  • [2] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS
    GLOVER, GH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 138 - &
  • [3] Measurement of MOSFET C-V Curve Variation Using CBCM Method
    Tsuji, Katsuhiro
    Terada, Kazuo
    Nakamoto, Tomoaki
    Tsunomura, Takaaki
    Nishida, Akio
    ICMTS 2009: 2009 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2009, : 81 - +
  • [4] Investigation of indium activation by C-V measurement
    Liu, JN
    Jeong, U
    Mehta, S
    Sherbondy, J
    Lo, A
    Shim, KH
    Lim, JE
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 66 - 69
  • [5] EQUILIBRIUM CONTROLLED STATIC C-V MEASUREMENT
    KERBER, M
    SCHWALKE, U
    SOLID-STATE ELECTRONICS, 1991, 34 (10) : 1141 - 1148
  • [6] Fast C-V method to mitigate effects of deep levels in CIGS doping profiles
    Paul, P. K.
    Bailey, J.
    Zapalac, G.
    Arehart, A. R.
    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 2414 - 2418
  • [7] Implant dose monitoring by MOS C-V measurement
    Sorge, R
    MICROELECTRONICS RELIABILITY, 2003, 43 (01) : 167 - 171
  • [8] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING
    KROEMER, H
    CHIEN, WY
    HARRIS, JS
    EDWALL, DD
    APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297
  • [9] MOS C-V TECHNIQUES FOR IC PROCESS-CONTROL
    MCMILLAN, L
    SOLID STATE TECHNOLOGY, 1972, 15 (09) : 47 - &
  • [10] C-V AND G-V CHARACTERISTICS FOR MOS SYSTEMS IN PRESENCE OF LIGHT USING DOUBLE MODULATION TECHNIQUES
    CALLAROTTI, RC
    SCHMIDT, PE
    SANTAS, M
    APONTE, JM
    ACTA CIENTIFICA VENEZOLANA, 1977, 28 : 33 - 33
12345