HYDROGENATED AMORPHOUS-SILICON FILMS BY 60 HZ GLOW-DISCHARGE DEPOSITION

被引：3

作者：

FRAGALLI, JF ^{[1
]}

MISOGUTI, L ^{[1
]}

NAKAGAITO, AN ^{[1
]}

GRIVICKAS, V ^{[1
]}

BAGNATO, VS ^{[1
]}

BRANZ, HM ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB, GOLDEN, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.355228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We deposit hydrogenated amorphous silicon (a-Si:H) in a low-frequency (60 Hz) glow-discharge deposition system. The films show electronic and optical properties nearly equivalent to those of films produced by the conventional radio-frequency (13.56-MHz) glow-discharge technique. The optimal substrate temperature for the low-frequency glow-discharge technique is 150-170-degrees-C, about 100-degrees-C lower than at radio frequency. We report measurements of film properties including dark conductivity, photoconductivity, ambipolar diffusion length, infrared absorption, optical band gap, and deep defect density.

引用

页码：668 / 671

页数：4

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