VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON

被引：9
|
作者：
HERINO, R
BILLAT, S
BSIESY, A
GASPARD, F
LIGEON, M
MIHALCESCU, I
MULLER, F
ROMESTAIN, R
VIAL, JC
机构：
[1] Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble, Saint Martin, D’Heres, 38402
来源：
PHYSICA SCRIPTA | 1992年 / T45卷
关键词：
D O I：
10.1088/0031-8949/1992/T45/065
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The luminescent properties of porous silicon films are reviewed ard discussed in relation with the mechanisms proposed for light emission. It is shown that a good control of the light emission is obtained by the use of electrochemically oxidized porous layers. The transient behavior of the photoluminescence is characterized, leading to propose a model for the recombination mechanisms involved in the light emission phenomena. Finally, the electroluminescence which appears during the anodic oxidation of porous silicon and the first reports of EL from solid devices are described.
引用
收藏
页码：300 / 304
页数：5
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