HIGH-POWER INGAAS/GAAS LASER ARRAY

被引：9
|
作者：
DUTTA, NK
WYNN, JD
LOPATA, J
SIVCO, DL
CHO, AY
机构：
[1] AT&T Bell Laboratories, Murray Hill
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 21期
关键词：
Semiconductor laser;
D O I：
10.1049/el:19901162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication and performance characteristics of Ino.2Gao.8As/GaAs gain guided laser arrays emitting near 1 ftm are reported. The multiquantum well active region has three wells and is grown by molecular beam epitaxy. The 1 mm long lasers have a broad area threshold current density of 90 A/cm2. The estimated transparency current density per well from the measured threshold current density against cavity length data is 22 A/cm2. The ten-stripe coupled laser arrays have been operated to pulsed output powers of 4W and CW output power of 1 W. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1816 / 1817
页数：2
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