5-W GAAS/GAALAS LASER-DIODES WITH A REACTIVE ION ETCHED FACET

被引：19

作者：

OU, SS

YANG, JJ

JANSEN, M

机构：

[1] TRW, Research Center, Space and Technology Group, Redondo Beach, CA 90278, One Space Park

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/GaAlAs laser diodes with reactive ion etched facets have been demonstrated for the first time with high output powers (5 W from 100-μm-wide apertures), high output power density (15 MW/cm2), and high slope efficiencies (66%) in junction-up configuration under quasi-cw operation. Mirror etching was performed in a pure SiCl4 gas environment by maintaining a low background pressure and gas pressure. High quality etched facets have been achieved with almost no scattering loss.

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页码：1861 / 1863

页数：3

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