ANGLE-RESOLVED PHOTOEMISSION AND VALENCE BAND DISPERSIONS ENERGY OF CRYSTAL MOMENTUM FOR GAAS - DIRECT VS INDIRECT MODELS

被引：47

作者：

CHIANG, TC ^{[1
]}

KNAPP, JA ^{[1
]}

EASTMAN, DE ^{[1
]}

AONO, M ^{[1
]}

机构：

[1] UNIV WISCONSIN,PHYS SCI LAB,STOUGHTON,WI 53589

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 12期

关键词：

D O I：

10.1016/0038-1098(79)90001-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Angle-resolved photoemission measurements for GaAs(110) have been extended to hv= 100 eV. These results show that dominant emission peaks are due to direct transitions. Weaker one-dimensional density of states features sometimes observed are due to surface umklapp/secondary cone and lifetime effects. Accurate band dispersions {A figure is presented} for all four valence bands GaAs along the [110] direction are given using simple normal emission and off-normal emission methods. Electron and hole lifetimes are directly determined. © 1979.

引用

页码：917 / 920

页数：4

共 15 条

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