HIGH-PERFORMANCE W-BAND LOW-NOISE PSEUDOMORPHIC INGAAS HEMT MMIC AMPLIFIERS

被引：2
|
作者：
TAN, KL
WANG, H
STREIT, DC
LIU, PH
DIA, RM
HAN, AC
GARSKE, D
BUI, S
LIU, JK
LIN, TS
DOW, GS
CHOW, PD
BERENZ, J
机构：
[1] TRW Electronics Technology Division One Space Park, Redondo Beach
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 13期
关键词：
AMPLIFIERS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
State of the art W-band low noise MMICs have been fabricated using pseudomorphic InGaAs HEMTs with a 0.1-mu-m gate length. A two-stage LNA fabricated using this process has achieved a gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz, with a noise figure of 5.5 dB at 94 GHz. These results are the best reported to date for any MMIC LNA fabricated on both GaAs and InP substrates at this frequency range.
引用
收藏
页码：1166 / 1167
页数：2
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