HIGH-PERFORMANCE W-BAND LOW-NOISE PSEUDOMORPHIC INGAAS HEMT MMIC AMPLIFIERS

被引：2
|
作者：
TAN, KL
WANG, H
STREIT, DC
LIU, PH
DIA, RM
HAN, AC
GARSKE, D
BUI, S
LIU, JK
LIN, TS
DOW, GS
CHOW, PD
BERENZ, J
机构：
[1] TRW Electronics Technology Division One Space Park, Redondo Beach
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 13期
关键词：
AMPLIFIERS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
State of the art W-band low noise MMICs have been fabricated using pseudomorphic InGaAs HEMTs with a 0.1-mu-m gate length. A two-stage LNA fabricated using this process has achieved a gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz, with a noise figure of 5.5 dB at 94 GHz. These results are the best reported to date for any MMIC LNA fabricated on both GaAs and InP substrates at this frequency range.
引用
收藏
页码：1166 / 1167
页数：2
相关论文
共 50 条
  • [1] W-band InGaAs HEMT low noise amplifiers
    Duh, K.H.G., 1600, (01):
  • [2] CRYOGENIC CHARACTERISTICS OF WIDE-BAND PSEUDOMORPHIC HEMT MMIC LOW-NOISE AMPLIFIERS
    YANG, CC
    NELSON, BL
    ALLEN, BR
    JONES, WL
    HORTON, JB
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (6-7) : 992 - 997
  • [3] HIGH-PERFORMANCE W-BAND MONOLITHIC PSEUDOMORPHIC INGAAS HEMT LNAS AND DESIGN ANALYSIS METHODOLOGY
    WANG, H
    DOW, GS
    ALLEN, BR
    TON, TN
    TAN, KL
    CHANG, KW
    CHEN, T
    BERENZ, J
    LIN, TS
    LIU, PH
    STREIT, DC
    BUI, SB
    RAGGIO, JJ
    CHOW, PD
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (03) : 417 - 428
  • [4] HIGH-PERFORMANCE KA-BAND AND V-BAND HEMT LOW-NOISE AMPLIFIERS
    DUH, KHG
    CHAO, PC
    SMITH, PM
    LESTER, LF
    LEE, BR
    BALLINGALL, JM
    KAO, MY
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (12) : 1598 - 1603
  • [5] High-gain W-band pseudomorphic InGaAs power HEMT's
    Streit, Dwight C.
    Tan, K.L.
    Dia, R.M.
    Liu, J.K.
    Han, A.C.
    Velebir, J.R.
    Wang, Shing K.
    Trinh, Tien Q.
    Chow, Pei-Ming D.
    Lui, P.H.
    Yen, H.C.
    Electron device letters, 1991, 12 (04): : 149 - 150
  • [6] W-Band Miniaturized Multistage MMIC Low-Noise Amplifier
    Li, Linpu
    Qian, Rong
    Sun, Hao
    Sun, Xiaowei
    2019 CROSS STRAIT QUAD-REGIONAL RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSQRWC), 2019,
  • [7] KA/Q-BAND BROAD-BAND, KA AND W-BAND LOW-NOISE HEMT AMPLIFIERS
    ARCHER, ED
    RYU, YI
    1989 IEEE MILITARY COMMUNICATIONS CONFERENCE, VOLS 1-3: BRIDGING THE GAP : INTEROPERABILITY, SURVIVABILITY, SECURITY, 1989, : 735 - 738
  • [8] A low phase noise W-band MMIC GaN HEMT oscillator
    Do, Thanh Ngoc Thi
    Yan, Yu
    Kuylenstierna, Dan
    2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 113 - 115
  • [9] HIGH-GAIN MONOLITHIC W-BAND LOW-NOISE AMPLIFIERS BASED ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS
    TU, DW
    DUNCAN, SW
    ESKANDARIAN, A
    GOLJA, B
    KANE, BC
    SVENSSON, SP
    WEINREB, S
    BYER, NE
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (12) : 2590 - 2597
  • [10] HIGH-GAIN, V-BAND, LOW-NOISE MMIC AMPLIFIERS USING PSEUDOMORPHIC MODFETS
    METZE, GM
    BASS, JF
    LEE, TT
    CORNFELD, AB
    SINGER, JL
    HUNG, HL
    HUANG, HC
    PANDE, KP
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) : 24 - 26
12345