共 50 条
- [41] DETERMINATION OF DIFFUSION LENGTH OF MINORITY-CARRIERS IN EPITAXIAL LAYERS BY PHOTOCURRENT SPECTROSCOPY APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (05): : 527 - 531
- [42] MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENT IN N-TYPE SEMICONDUCTOR BY A PHOTOELECTRO-CHEMICAL METHOD CHINESE PHYSICS, 1987, 7 (01): : 266 - 269
- [43] NOISE AND DIFFUSION OF HOT CARRIERS IN N-TYPE GE AND N-TYPE SI IN MAGNETIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 89 - 92
- [44] INFLUENCE OF A SURFACE ELECTRIC FIELD ON DENSITY OF EXCESS CARRIERS EXCITED BY ELECTRON BOMBARDMENT OF AN N-TYPE SEMICONDUCTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (05): : 877 - &
- [47] Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs 1600, American Inst of Physics, Woodbury, NY, USA (75):
- [48] MEASUREMENT OF THE DIFFUSION LENGTH OF MINORITY CARRIERS IN p-n JUNCTIONS. 1978, 21 (6 pt 2): : 1630 - 1632