共 50 条
- [41] Growth of (InSb)1 − x(Sn2)x films on GaAs substrates by liquid-phase epitaxy Semiconductors, 2010, 44 : 938 - 945
- [43] Investigation of epitaxial layers ZnTe on substrates GaAs (310) by the methods of ellipsometry and the method of x-ray photoelectronic spectroscopy Avtometriya, 2001, (03): : 30 - 38
- [44] THE EFFECT OF DOPING ON THE GRAIN-STRUCTURE OF AS-DEPOSITED AND HIGH-TEMPERATURE ANNEALED LPCVD WSI2 FILMS ON POLYSILICON CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 : 421 - 426
- [45] STRUCTURAL-PROPERTIES OF (GAAS)1-X(SI2)X LAYERS ON GAAS(100) SUBSTRATES GROWN BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4A): : L547 - L550
- [47] Contrast analysis in TEM images of InGaAs/GaAs strained layers grown on non-planar substrates MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 185 - 188
- [50] Investigation of InAs submonolayer and monolayer structures on GaAs(100) and (311) substrates Journal of Applied Physics, 1993, 74 (12):