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- [1] TEM INVESTIGATIONS OF SEMIINSULATING GAAS SUBSTRATES MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 385 - 390
- [2] TEM INVESTIGATIONS OF SEMIINSULATING GAAS SUBSTRATES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 385 - 390
- [6] TEM STUDY OF MBE GAAS GROWTH ON SILICON SUBSTRATES EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY, 1988, 93 : 79 - 80
- [7] TEM STUDY OF MBE GAAS GROWTH ON SILICON SUBSTRATES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 79 - 80
- [8] Characteristics of LPCVD WSi2/n-Si Schottky contacts Electron device letters, 1991, 12 (04): : 169 - 171
- [9] A TEM study of InGaAs/GaAs SQWs grown by MOVPE on (100) and 2 degrees off (100)GaAs substrates MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 361 - 364
- [10] A TEM INVESTIGATION OF NIAUGE OHMIC CONTACTS TO GAAS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 303 - 308