HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：16

作者：

FUKANO, H

KAWAMURA, Y

TAKANASHI, Y

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1109/55.727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：312 / 314

页数：3

共 10 条

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[4]

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[6] SELF-ALIGNED ALGAAS/GAAS HBT WITH INGAAS EMITTER CAP LAYER [J].

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[7] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :282-284

[8] DOUBLE-HETEROJUNCTION GAALINAS/GAINAS BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J].

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IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :516-518

[9] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

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[10] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J].

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