IMPROVEMENTS IN THE HETEROEPITAXY OF GAAS ON SI

被引：46

作者：

LUM, RM ^{[1
]}

KLINGERT, JK ^{[1
]}

DAVIDSON, BA ^{[1
]}

LAMONT, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：36 / 38

页数：3

共 10 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[3]

FAN JCC, 1986, MATERIALS RES SOC S, V67

[4]

Harris T., COMMUNICATION

[5]

Hirsch P.B., 1956, PROGR METAL PHYSICS

[6] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J].

HULL, R ;

FISCHERCOLBRIE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :851-853

[7] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[8] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM [J].

LUM, RM ;

KLINGERT, JK ;

DUTT, BV .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) :421-428

[9] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING [J].

SAKAMOTO, T ;

HASHIGUCHI, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L78-L80

[10] PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GAAS GROWN DIRECTLY ON SI [J].

ZEMON, S ;

SHASTRY, SK ;

NORRIS, P ;

JAGANNATH, C ;

LAMBERT, G .

SOLID STATE COMMUNICATIONS, 1986, 58 (07) :457-460

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